The 3rd generation semiconductor is a critical industry strategy for Taiwan. However, the supply of manufacturing carriers mainly rely on foreign sources. The carrier technology for high-temperature corrosion-resistant compound semiconductor manufacturing is the only applicable domestic technology for CVD SiC carrier production. With an average film thickness of 100±35μm and warpage less than 500μm, this technology completes the autonomy and competitiveness of Taiwan and massively enhances the epitaxy quality of components.