半導體製程進入2奈米節點，GAA製程面臨挑戰，如新材料、需精密解析度監控以確保良率等。本設備以X光為基礎，穿透多層環繞式閘極結構，以原子級解析度監控關鍵尺寸，減少90%量測時間，為台灣自主開發之線上量測2nm製程關鍵尺寸設備， 2025年市場預計1.3億美元，年成長率達36.8%。
In the 2nm node semiconductor process, GAA three-dimensional structures face challenges such as new materials and require super high resolution monitoring to ensure process yields. The team develops this 2 nm node front-end metrology tool based on X-ray technology. The XRCD metrology tool measures multilayer GAA structures and monitors critical dimensions with atomic-level resolution, reducing measurement time by 90%. The target market includes foundry and memory below N2 process node. The market is expected to be USD 130 million in 2025, with an annual growth rate of 36.8%.